Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions
This paper investigates the behavior of SiC MOSFETs body diode reverse recovery as a function of different operating conditions.The knowledge of their effects is crucial to properly designing and driving power converters based on SiC devices, in order to optimize the MOSFETs commutations aiming at Supplements improving efficiency.Indeed, reverse re